| PART |
Description |
Maker |
| M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M295V400BT45M1T M295V400BT45M3T M295V400BT45M6T M2 |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Single Supply Flash Memory
From old datasheet system
|
STMicroelectronics
|
| M29W400 M29W400B M29W400B-100M1R M29W400B-100M1TR |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M29F400B M29F400T 5127 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Single Supply Flash Memory
From old datasheet system
|
STMicro
|
| M29W400BB M29W400BB120M1T M29W400BB120M6T M29W400B |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M36W432TG70ZA1T M36W432TG85ZA6T M36W432TG-ZAT M36W |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
意法半导
|
| M36W432BG M36W432BG70ZA1T M36W432BG70ZA6T M36W432B |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W400T |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(4M位闪速存储器)
|
意法半导
|
| M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MPC2104P MPC2105P |
(MPC2104P / MPC2105P) 256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB/512KB BurstRAM二级缓存模块为PowerPC制备/ CH旺平
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| M29F800D |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 5V SUPPLY FLASH MEMORY
|
STMicroelectronics
|
